symbol max p-channel units v ds v v gs v i dm i ar a e ar mj t j , t stg c symbol typ units n-ch 55 62.5 c/w n-ch 92 110 c/w r q jl n-ch 37 50 c/w p-ch 48 62.5 c/w p-ch 84 110 c/w r q jl p-ch 37 50 c/w maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s r q ja maximum junction-to-ambient a steady-state -30 t a =70c power dissipation t a =25c p d steady-state junction and storage temperature range a continuous drain current a t a =25c i d t a =70c pulsed drain current b w 7.2 6.1 30 2 1.44 -5.1 -6.1 2 1.44 absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel r q ja maximum junction-to-ambient a 30 -30 20 drain-source voltage 20 gate-source voltage max 20 maximum junction-to-lead c steady-state parameter maximum junction-to-ambient a t 10s avalanche current b repetitive avalanche energy 0.1mh b 15 11 thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 20 AO4613 30v dual p + n-channel mosfet n-channel p-channel v ds (v) = 30v -30v i d = 7.2a (v gs =10v) -6.1a (v gs =10v) r ds(on) r ds(on) < 24m w (v gs =10v) < 37m w (v gs = -10v) < 40m w (v gs =4.5v) < 60m w (v gs = -4.5v) the AO4613 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used to form a level shifted high side switch, and for a host of other applications. n-channel p-channel soic-8 g1 s1 g2 s2 d1 d1 d2 d2 top view g1 d1 g2 d2 s2 s1 www.freescale.net.cn general description features
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 10 m a v gs(th) 1 2 3 v i d(on) 20 a 20 24 t j =125c 29 35 30 40 m w g fs 10 18 s v sd 0.77 1 v i s 3 a c iss 522 630 pf c oss 110 pf c rss 75 pf r g 2.1 3 w q g (10v) 11 15 nc q g (4.5v) 5.3 7 nc q gs 1.9 nc q gd 4 nc t d(on) 4.7 7 ns t r 4.9 10 ns t d(off) 16.2 22 ns t f 3.5 7 ns t rr 15.7 20 ns q rr 7.9 10 nc maximum body-diode continuous current dynamic parameters body diode reverse recovery charge total gate charge i f =7.2a, di/dt=100a/ m s turn-off delaytime turn-off fall time body diode reverse recovery time i f =7.2a, di/dt=100a/ m s input capacitance n-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 m a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v m a gate-body leakage current v ds =0v, v gs =12v gate threshold voltage v ds =v gs i d =250 m a on state drain current v gs =10v, v ds =5v r ds(on) static drain-source on-resistance forward transconductance m w v gs =4.5v, i d =4a v ds =5v, i d =7.2a i s =1a v gs =10v, i d =7.2a diode forward voltage v gs =10v, v ds =15v, r l =2.1 w , r gen =3 w gate source charge gate drain charge turn-on delaytime turn-on rise time total gate charge v gs =10v, v ds =15v, i d =7.2a v gs =0v, v ds =15v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance gate resistance output capacitance a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's spec ific board design. the current rating is based on t he t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. r q jl and r q jc are equivalent terms referring to thermal resistance from junction to drain lead. d. the static characteristics in figures 1 to 6 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn AO4613 30v dual p + n-channel mosfet
symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 10 m a v gs(th) -1 -1.7 -3 v i d(on) 30 a 28 37 t j =125c 39 48 45 60 m w g fs 12.5 s v sd -0.77 -1 v i s 3 a c iss 1040 1250 pf c oss 179 pf c rss 134 pf r g 5 10 w q g (10v) 16.8 22 nc q g (4.5v) 8.7 12 nc q gs 3.4 nc q gd 5 nc t d(on) 9 12 ns t r 5.7 11 ns t d(off) 22.7 30 ns t f 10.2 20 ns t rr 21.7 27 ns q rr 13.6 18 nc body diode reverse recovery time i f =-6.1a, di/dt=100a/ m s body diode reverse recovery charge i f =-6.1a, di/dt=100a/ m s turn-on delaytime v gs =-10v, v ds =-15v, r l =2.5 w , r gen =3 w turn-on rise time turn-off delaytime turn-off fall time total gate charge (4.5v) gate source charge gate drain charge switching parameters total gate charge (10v) v gs =-10v, v ds =-15v, i d =-6.1a reverse transfer capacitance gate resistance dynamic parameters input capacitance v gs =0v, v ds =-15v, f=1mhz v gs =0v, v ds =0v, f=1mhz diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current output capacitance v ds =-5v, i d =-6.1a r ds(on) static drain-source on-resistance forward transconductance v gs =-10v, i d =-6.1a m w v gs =-4.5v, i d =-4a gate threshold voltage v ds =v gs i d =-250 m a on state drain current v gs =-10v, v ds =-5v m a gate-body leakage current v ds =0v, v gs =12v drain-source breakdown voltage i d =-250 m a, v gs =0v i dss zero gate voltage drain current v ds =-24v, v gs =0v p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating i s based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. r q jl and r q jc are equivalent terms referring to thermal resistance from junction to drain lead. d. the static characteristics in figures 1 to 6,12, 14 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn AO4613 30v dual p + n-channel mosfet
n-ch typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 15 20 25 30 35 40 0 5 10 15 20 i d (amps) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body diode characteristics i s amps 125c 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 0 25 50 75 100 125 150 175 temperature ( c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =7.2a v gs =4.5v i d =4a 10 20 30 40 50 60 70 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =7.2a 125c 25c 25c 5v www.freescale.net.cn AO4613 30v dual p + n-channel mosfet
n-ch typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 12 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power w 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance c oss c rss 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =7.2a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v 10 m s www.freescale.net.cn AO4613 30v dual p + n-channel mosfet
p-ch typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3v -6v -3.5v -4v -10v -2.5v 0 5 10 15 20 25 0 1 2 3 4 5 6 -v gs (volts) figure 2: transfer characteristics -i d (a) 20 30 40 50 60 70 80 90 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v i d =-6.1a v gs =-4.5v i d =-4 10 20 30 40 50 60 70 80 90 100 3 4 5 6 7 8 9 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-6.1a 25c 125c -4.5v -5v www.freescale.net.cn AO4613 30v dual p + n-channel mosfet
p-ch typical electrical and thermal characteristics 0 2 4 6 8 10 0 4 8 12 16 20 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c, t a =25c v ds =-15v i d =-6.1a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s www.freescale.net.cn 7/7 AO4613 30v dual p + n-channel mosfet
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